Oxygen Plasma Surface Treatment onto ITO Surface for OLEDs Based on Europium Complex
G. Santos, M. R. Cavallari, F. J. Fonseca, and L. Pereira

MWCNT Devices Fabricated by Dielectrophoresis: Study of Their Electrical Behavior Related to Deposited Nanotube Amount for Gas Sensing Applications
E. Galeazzo, M. C. Moraes, H. E. M. Peres, M. O.S. Dantas, V. G.C. Lobo, and F. J. RamirezFernandez

Multi-Chip Module (MCM-D) Using Thin Film Technology
C. B. Adamo, A. Flacker, W. Freitas, R. C. Teixeira, M. O. da Silva, and A. L. P. Rotondaro

Mitigating MOSFET Radiation Effects by Using the Wave Layout in Analog ICs Applications
R. N. de Souza, M. A. G. da Silveira, and S. P. Gimenez

Effect of substrate type on structure of TiO2 thin film deposited by atomic layer deposition technique
R. S. Pessoa, F. P. Pereira, G. E. Testoni, W. Chiappim, H. S. Maciel, and L. V. Santos.

The Influence of Back Gate Bias on the OCTO SOI MOSFET's Response to X-ray Radiation
L. N. de S. Fino, M. A. G. Silveira, C. Renaux, D. Flandre, and S. P. Gimenez

Physical characterization of hafnium aluminates dielectrics deposited by atomic layer deposition
D. R. Huanca, V. Christiano, C. Adelmann, P. B. Verdonck and Sebastião G. dos Santos Filho

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