Study of Power Balance in Electronegative Capacitively Coupled Plasmas
L. Swart; P. Verdonck; S. A. Moshkalyov

Simulation of Silicon Microsructure for Preconcentration of Metallic Ions
J. A. F. da Silva; R. Furlan; E. W. Simões; M. L. P. da Silva; M. T. Pereira

Analysys of Defects Generated by the Reflow Soldering inSMT (Surface Mount Technology) Assembly Applying the Six Sigma Method
A. C. Bueno; M. P. Shiki; V. R. de Lima; L. G. Brandão; M. M. Oka

In-Situ and Ion Implantation Nitrogen Doping on Near Stoichiometric a-SIC:H Films
A. R. Oliveira; M. N. P. Carreño

Study of the Drain Leakage Current Behavior in Graded-Channel SOInMOSFETs Operating at High Temperartures
M. Bellodi; J. A. Martino

Conductance of Single-andDouble-Gated Quantum Stub Transistor
A. B. Guerra; E. J. P. Santos

The Effect of Nitrogen Concentration at OxynitrideGate Insulators Formed by 28N2+ Implantation intoSilicon with Additional Conventional or RapidThermal Oxidation
G. Felício; J. A. Diniz; J. Godoy Fo.; I. Doi; M. A. A. Pudenzi; J. W. Swart