SBMicro
2003
18th
SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES
CHIP IN SAMPA
São Paulo, Brazil
September 8-11, 2003
ADVANCE PROGRAM |
Monday, September 8, 2003 |
|
Tutorial Day |
|
7:30 to 18:00 |
Registration |
8:30 to 10:30 |
Dielectrics for Submicrometric Devices Magali Estrada del Cueto, CINVESTAV, Mexico Abstract: |
10:30 to 11:00 |
Break |
11:00 to 13:00 |
Silicon-on-Insulator: Materials and Devices Jean-Pierre Colinge, University of California, Davis, USA Abstract: |
|
Lunch |
to 16:30 |
Submicrom Silicon Technologies Cor Claeys, IMEC, Belgium Abstract: |
|
Break |
16:45 to 18:25 |
Business Sessions |
19:00 to 20:30 |
SBMicro
General Assembly
|
Tuesday, September 9, 2003 |
|
8:00 to 18:00 |
Registration |
8:20 to 10:00 |
Process
Technology - 1
|
M03:
The Effect of Nitrogen Concentration at Silicon Oxynitride Gate Insulators
Formed by 28N2+ Implantation into Silicon with Additional Conventional
or Rapid Thermal Oxidation M04:
Formation of Nickel Silicides onto (100) Silicon Wafer Surfaces Using
a Thin Platinum Interlayer M05:
In-Situ and Ion Implantation Nitrogen Doping On Near Stoichiometric a-SiC:H
Films M06:
Silicon Carbide Clusters in Silicon Formed by Carbon Ions Implantation |
|
10:00 to 10:20 |
Break |
10:20 to 12:00
|
SOI
- 1
|
IM01:
Multiple-Gate Silicon-On-Insulator MOS Transistor (Invited Paper) |
|
M01:
Degradation of Deep Submicron Partially Depleted SOI CMOS Transistors
Under MEV Proton or Gamma Irradiation
E. Simoen, J.M. Rafi, A. Mercha, K. De Meyer, C. Claeys, M. Kokkoris, E. Kossionides, G. Fanourakis and A. Mohhamdzadeh M02:
The Leakage Drain Current Behavior in Graded-Channel SOI nMOSFETs Operating
up to 300o C |
|
12:00 to 14:00 |
Lunch |
14:00 to 14:30 |
Chip in Sampa Opening Session Wilhelmus
Van Noije (Chip in Sampa General Chair) |
14:40 to 15:30 |
Keynote Speech New Technologies: Impacts and Implementations Kevin Knox, AMD , USA |
15:30 to 16:20 |
Keynote Speech 2 Title: Coming Challenges in Microprocessors Speaker:
Shih-Lien Lu, Intel Corporation, |
16:20 to 16:40 |
Break |
16:40 to 18:00 |
Poster Sessions |
18:00 to 18:30 |
Break |
18:30 to 20:00 |
Panel 1 (in Portuguese) Microeletrônica - Cenários para a reinserção da Indústria de Chips no Brasil Moderator: Sergio Bampi, UFRGS, Brazil Panelists: Francelino L. Grando (MCT) Regina M. V. Gutierrez (BNDES) Wanderley Marzano (Aegis Ltda.) Toshihiko Komatsu (ABINEE) Armando Gomes (Motorola) Nery Santos Filho (CEITEC) Arnaldo Serrão (MDIC) |
Wednesday, September 10, 2003 |
|
8:20 to 10:00 |
Device
Physics and Simulation
|
M07:
"Atomistic" Simulation of AlGaAs/InGaAs/GaAs pHEMTs M08:
Numerical Analysis of the Quantum STUB Transistor M09:
State Diagram Simulations of SET Circuits Using SPICE M10:
On the Modelling of the Dark Current Characteristics of Heterodimensional
Schottky Photodiodes |
|
10:00 to 10:20 |
Break |
10:20 to 12:00 |
Low
Temperature
|
IM02:
Low Temperature Electronics: From Fundamental Physics to Emerging Silicon
Technologies (Invited Paper) |
|
M11: A Study on the Self-Heating Effect in Deep-Submicrometer
Partially Depleted SOI MOSFETs at Low Temperatures
M. A. Pavanello, J. A. Martino, E. Simoen, A. Mercha, C. Claeys and K. De Meyer M12:
Performance Analysis of Single-Electron Winner-Take-All Network Circuits |
|
12:00 to 14:00 |
Lunch |
14:00 to 15:40 |
SOI
- 2
|
M13:
Analysis of the Capacitance vs. Voltage in Graded Channel SOI Capacitor M14:
Analysis on GC SOI MOSFET Analog Parameters at High Temperatures M15:
Study of Series Resistance and Effective Channel Length Behavior Comparing
Graded-Channel and Conventional SOI nMOSFETs M16:
An Improved Current Model for Edgeless SOI MOSFETS |
|
15:40 to 16:00 |
Break |
16:00 to 17:30 |
Panel 2 (in English) Future Systems Design: The Convergence of Technology, Design and Tools Moderator: Wolfgang Rosenstiel Panelists: Cor Claeys, IMEC, Belgium Santanu Dutta, Philips Semiconductors, USA Patrick Lysaght, Xilinx , USA Grant Martin, Cadence Berkeley Labs, USA |
20:00
|
Conference
Dinner
|
Thursday, September 11, 2003 |
|
8:20 to 10:00 |
Process
Technology - 2
|
M17:
Characterization of Electrospinning Process Using Blends of Polyacrylonitrile
and Carbon Particles M18:
Selective Silicon Nitride Etching by ECR Plasmas Using SF6 and NF3 Based
Gas Mixtures M19:
Study of Power Balance in Electronegative Capacitively Coupled Plasmas M20:
Synthesis of Carbon Nanotubes by Plasma-Enhanced Chemical Vapor Deposition |
|
10:00 to 10:20 |
Break |
10:20 to 12:00 |
Device
Characterization
|
IM3:
The Integral Function Method: A New Method to Determine the Non-Linear
Harmonic Distortion (Invited Paper) |
|
M21:
Determination of the Silicon Film Thickness and Back Oxide Charge Density
on Graded-Channel SOI nMOSFETs M22:
ESD Defect Localization and Analysis Using Pulsed OBIC Techniques |
|
12:00 to 14:00 |
Lunch |
14:00 to 15:40 |
Sensors
and Actuators
|
M23:
Integrated Termopiles for Infrared Sensing
W. R. Mendes, H. E. M. Peres and F. J. Ramirez-Fernandez M24:
Porous Silicon Processing for Enhancing Thin Silicon Membranes Fabrication M25:
Gold Microwires Applied to Cardiac Potential Detection M26:
Simulations of Silicon Microstructure for Preconcentration of Metallic
Ions |
|
15:40 to 16:00 |
Break |
16:00 to 17:30 |
Panel 3 (in Portuguese) Como alavancar a pesquisa e desenvolvimento em Microeletrônica no Brasil? Moderator: Wilhelmus van Noije, USP, Brazil Panelists: Reinaldo Bergamaschi, IBM Research , USA Carlos H. de Brito Cruz, UNICAMP, Brazil José R. Leite, CNPq , Brazil Sergio M. Rezende, FINEP, Brazil Flavio R. Wagner, UFRGS / SBC, Brazil |