Fernando Guarín
Title:
"Microelectronic Reliability Topics for Advanced CMOS and SiGe Technologies."
Abstract:
As we continue the relentless drive towards smaller device feature sizes and higher levels of integration at the chip level, it has become increasingly evident that a judicious review and very complete understanding of the reliability mechanisms will be crucial for the successful introduction of the most advanced technologies that will be introduced in the near future.
The increased device count and process complexity, coupled with ever decreasing margins in voltage, geometry and the incorporation of new material systems like high and low k dielectrics, stress/strain layers, high conductivity interconnects, 3D structures will be discussed from the reliability perspective. A closer look will be given to Hot Carriers, Bias Temperature Instabilities, self-heating effects, statistical variations (process and geometric), Power Supply Decoupling and Silicon Germanium Heterojunction Bipolar Transistors as well as electromigration issues. The implications of reliability induced parameter degradation and the mitigation of these effects will be analyzed and put in perspective.
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