Technical Program
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CHIP IN THE PAMPA at a Glance
SBCCI2008, SBMicro2008 and SFORUM2008 |
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SBMicro2008 Program
Monday, September 1st
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8:20 - 9:30 |
IEEE/EDS Tutorial 1 (Room: Esmeralda)
Fundamentals and Challenges of SOI Technologies and Applications
Carlos Mazure (SOITEC, France) |
9:30 - 10:30 |
IEEE EDS/SBCCI Joint Tutorial (Room: Esmeralda)
Sizing CMOS Circuits by Means of the gm/ID Methodology and a Compact Model
Paul Jespers (Universit� Catholique de Louvain, Belgium)
Chair: S�rgio Bampi (UFRGS, Brazil)
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10:30 - 11:00 | Coffee-Break (Room: Safira) |
11:00 - 12:00 |
IEEE/EDS Tutorial 3 (Room: Esmeralda)
Microelectronic Reliability Topics for Advanced CMOS and SiGe Technologies
Fernando Guarin (IBM) |
12:30 -14:00 |
Break for Lunch
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14:00 - 15:00 |
IEEE/EDS Tutorial 4 (Room: Esmeralda)
Microsystems and Nanosystems: Manufacturing Challenges
Rajendra Singh (Clemson University, USA)
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15:00 - 16:00 |
IEEE/EDS Tutorial 5 (Room: Esmeralda)
Nanoscale Transistors: Ultimate Silicon and Beyond and Nanowire/Nanotube Transistors: Physics, Status, and Prospects
Mark Lundstrom (Purdue University, USA) |
16:00 - 16:30 | Coffee-Break (Room: Safira) |
18:30 - 20:30 |
Fringe Meeting (Room: Rubi, in Portuguese)
Assembl�ia Geral da Comiss�o Especial de Concep��o de Circuitos Integrados da Sociedade Brasileira de Computa��o |
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Tuesday, September 2nd
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8:20 - 9:00 |
Technical Program Opening (Room: Rubi)
Message from the General Chair
Marcelo Lubaszewski (UFRGS, Brazil)
Message from the Program Chairs
SBCCI2008
Michel Renovell (LIRMM, France), Rajesh Gupta (UCSD, USA)
SBMicro2008
Jacobus Swart (UNICAMP, Brazil), Siegfried Selberherr (TU-Wien, Austria)
SForum2008
Fernando Rangel (UFRN, Brazil), Salvador Gimenez (FEI, Brazil)
IEEE CASS Awards
Maciej Ogorzalek (IEEE CASS President)
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9:30 - 10:00 |
Keynote Address (Room: Rubi)
System-level Design Technologies for Heterogeneous Distributed Systems
Giovani De Micheli (�cole Polytechnique F�d�rale de Lausanne, Switzerland)
Session Chair: Michel Renovell (LIRMM, France)
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10:00 - 10:30 | Coffee-Break (Room: Safira)
Lauching of the Latin-American Student IC Design Contest
Organized by CEITEC
Supported by SBMicro, X-FAB and MOSIS
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Session 1 Optoelectronics (Room: Esmeralda)
Chair: Newton Fratechi (UNICAMP)
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10:40 - 11:20 |
Photovoltaics: Multi Terra Watt Green Energy Conversion in the 21st Century (Invited)
R. Singh, N. Gupta and K. F. Poole (Clemson University, USA)
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11:20 - 11:40 |
Towards 21% Efficiency Silicon Solar Cells with Rear Passivation in Non-Ultra Clean Facilities: the Development of a Simplified Fabrication Process Achieving 660mV / 670mV Open-Circuit Voltages using FZ and Cz Silicon Wafers
Nair Stem, Manuel Cid and Carlos Alberto Ramos
EPUSP, Brazil
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11:40 - 12:00 |
Multi-Efficiency Position-Sensitive Detector with Linearized Response
Adrian Chasin, Luciana Salles and Davies Lima Monteiro
UFMG, Brazil
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12:00 - 12:30 |
Observation of Resonance Modes in InAs/InGaAsP/InP Quantum Dot Microdisk Resonators
Jos� Roberto Mialichi, Luis Alberto M. Barea, Ant�nio Augusto VonZuben and Newton Ces�rio Frateschi
Unicamp, Brazil
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12:30 -14:00 |
Break for Lunch
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Session 2 - MOS Gate Dieletrics (Room: Esmeralda)
Chair: Henri Boudinov (UFRGS)
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14:00 - 14:40 | Engineered Substrates for Power, RF and 3D (Invited)
Carlos Mazure (Soitec, France)
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14:40 - 15:00 |
High-k Gate-Dielectrics Based on Titanium-Aluminium for sub-32 nm CMOS Technology
Juliana Miyoshi, Ricardo Wada, Angelica Denardi de Barros, F�bio Aparecido Cavarsan, Ioshiaki doi and Jos� Alexandre Diniz
Unicamp, Brazil
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15:00 - 15:20 |
A novel approach to characterization of progressive BD in high-k / metal gate stacks
Roberto Pagano, Salvatore Lombardo, Felix Palumbo, Carloni, Kirsch, Krishnan, Young, Choi, Bersuker and James Stathis
IMM-CNR, Italy
SEMATECH, IBM, USA
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15:20 - 15:40 |
Radiation Effects on Programmed NROM Cells
Domenico Corso, Andrea Palermo, Felix Palumbo, Sebania Libertino, Salvatore Lombardo, Michael Lisiansky and Yakov Roizin
IMM-CNR, Italy
CNEA, Argentina
Tower Semiconductors, Israel
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15:40 - 16:00 |
Improved Density of States and Effective Charge Density in SI/PECVD SIOXNY Interface
Katia Albertin and In�s Pereyra
USP, Brazil
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Session 3 - Packaging (Room: Top�zio)
Chair: Celso Peter (CEITEC)
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14:40 - 15:00 |
Waferlevel Vacuum Packaging: Essential for Microscanners in Mobile Applications
Marten Oldsen, U. Hofmann, W. Reinert, H.J. Quenzer and B. Wagner
Fraunhofer ISIT, Germany
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15:00 - 15:20 |
Mechanism Design of Rotational Magnetic-Assistance Electrochemical Finishing on Freeform Surface
P.S. Pa
National Taipei University of Education, Taiwan
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15:20 - 15:40 |
Characterization of Plastic Packaging with Fringing Electric Field Sensors
Kishore Sundara-Rajan, Abhinav Mathur and Alexander Mamishev
University of Washington, USA
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15:40 - 16:00 |
Study of a Low Cost Reballing of BGA Method with Lead-Free Solder Paste
Talita Mazon, Guilherme Prevedel, Egont Schenkel and Marcio Biasoli
CenPRA, Brazil
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16:00 - 16:30 |
Coffee-Break (Room: Safira)
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16:30 - 18:30 |
Political Panel (Room: Rubi, in Portuguese)
Pol�tica de C&T para Inova��o e Competitividade em TIC
Organizador: Altamiro Susin (SBMicro, Brazil)
Moderador: S�rgio Bampi (CECCI-SBC, Brazil)
Painelistas:
S�rgio Rezende, Exmo. Ministro de Ci�ncia eTecnologia
Jacobus Swart, Institutos do MCT
Ag�ncias Governamentais: CNPq, FINEP e BNDES
Assoc. Bras. das Ind�strias de Eletro-Eletr�nica
Gisele Roesems, Com. de Nanoeletr�nica - CEE
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18:30 - 19:30 |
Official Opening (Room: Rubi, in Portuguese)
Sergio Rezende, Exmo. Ministro de Ci�ncia eTecnologia
Secretaria de C&T do Estado do RGS
Univ. Fed. do Rio Grande do Sul
Ag�ncias Governamentais: CNPq, FINEP e CAPES
Marcelo Lubaszewski, Coordena��o do Evento
Altamiro Susin, SBMicro
S�rgio Bampi, CECCI-SBC
Maciej Ogorzalek, IEEE CASS
Entrega do Pr�mio Padre Landell de Moura
Sergio Rezende, Exmo. Ministro de Ci�ncia eTecnologia
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19:30 -21:30 |
Welcome Cocktail (Room: Esmeralda)
SBCCI 25� Anniversary Celebration
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Wednesday, September 3rd
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Session 4 - Device Characterization (Room: Esmeralda)
Chair: Fernando Guarin (IBM)
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8:30 - 9:10 |
Miniaturization - Performance and Reliability Trends in Advanced CMOS Technologies (Invited)
Fernando Guarín (IBM)
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9:10 - 9:30 |
Influence of the Drain Bias and Gate Length of Partially Depleted SOI MOSFETs on the ZTC Biasing Point
Luciano Mendes Camillo, Jo�o Antonio Martino, Eddy Simoen and Cor Claeys
USP, Brazil
IMEC, KU Leuven, Belgium
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9:30 - 9:50 |
Influence of Fin Width on the Intrinsic Voltage Gain of Standard and Strained Triple-Gate nFinFETs
Marcelo Pavanello, Joao Martino, Eddy Simoen, Rita Rooyackers, Nadine Collaert and Cor Claeys
IMEC, KU Leuven, Belgium
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9:50 - 10:20 |
Channel Length Influence on the Performance of Source-Follower Buffers Implemented with Graded-Channel SOI nMOSFETs
Michelly de Souza, Denis Flandre and Marcelo Pavanello
USP, Centro Universit�rio da FEI, Brazil
Universit� Catholique de Louvain, Belgium
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10:00 - 10:30 |
Coffee-Break (Room: Safira)
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Session 5 - Thin Films and Plasma Etching (Room: Esmeralda)
Chair: Arturo Escobosa (CINVESTAV)
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10:30 -10:50 |
Analysis of Electromigration in Dual Damascene Interconnect Structures
Roberto Lacerda de Orio, Sara Carniello, Hajdin Ceric and Siegfried Selberherr
TUWien, Austria Microsystems AG, Austria
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10:50 - 11:10 |
Photoluminescence in silicon-rich PECVD silicon oxynitride alloys
Marcia Ribeiro and In�s Pereyra
USP, Brazil
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11:10 - 11:30 |
Electrical characterization of electrodeposited Co/p-Si Schottky diodes
Ricardo Zandonay, Rafael Gallina Delatorre and Andr� Avelino Pasa
UFSC, Brazil
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11:30 -11:50 |
Plasma Diagnostics in an Inductively Coupled Plasma - Gaseous Electronics Conference Reference Cell
Andre Daltrini, Stanislav Moshkalev, Thomas Morgan, Robert Piejak and William Graham
CEITEC, Unicamp, Brazil,
Wesleyan University, USA
Queen's University, Northern Ireland
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11:50 - 12:10 |
Etching Characteristics and Surface Morphology of Nitrogen-Doped a-SiC Films Prepared by RF Magnetron Sputtering
Mariana Fraga, Rodrigo Pessoa, Marcos Massi, Ivo Oliveira, Homero Maciel, Herculano Martinho, Sebasti�o Santos Filho and Jossano Marcuzzo
ITA, UFABC, Brazil
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12:10 - 14:00 |
Break for Lunch
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Session 6 - Device Modeling (Room: Esmeralda)
Chair: Jos� Alexandre Diniz (UNICAMP)
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14:00 - 14:20 |
Mobility Modeling in Advanced MOSFETS with Ultra-Thin Silicon Body Under Stress
Viktor Sverdlov and Siegfried Selberherr
TU-Wien, Austria
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14:20 - 14:40 |
Analog Performance of Dynamic Threshold Voltage SOI MOSFET
Jefferson Amaro, Paula Agopian and Jo�o Martino
USP, Brazil
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14:40 - 15:00 |
A Series Association Model For Double Gate Graded-Channel SOI nMOSFET Analog Circuit Simulation
Francisco Ferreira, Antonio Cerdeira and Marcelo Pavanello
Centro Universit�rio da FEI, Brazil
CINVESTAV, Mexico
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15:00 - 15:20 |
Efficient and Accurate Neural Network-Based Macro-models for Spiral Inductors
Abby Ilumoka and Raghuveer J. Srinivasan
University of Hartford, North-East Utilities, USA
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15:20 - 15:40 |
3D Triple-gate simulation considering the crystallographic orientations
Jorge E. Conde, Antonio Cerdeira and MArcelo Antonio Pavanello
CINVESTAV, Mexico
Centro Universit�rio da FEI, Brazil
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15:40 - 16:00 |
Strained-Si MOSFETs for Low-Power Applications
T. K. Maiti, T. Das, P. S. Das, S. K. Sarkar and C. K. Maiti
IIT Kharagpur, India
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Session 7 - Organic Devices and Displays (Room: Top�zio)
Chair: Victor Mammana (CTI)
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14:00 - 14:20 |
Charge transport layers in OC1C10-PPV PLEDs
Helena Liberatori Gimaiel, Ely A. T. Dirani, Fernando J. Fonseca, Gerson Santos and Adnei M. de Andrade
EPUSP, IEE-USP, Brazil
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14:20 - 14:40 |
Field emission studies in a conducting sphere-plane electrodes system
Fernando Fuzinatto Dall'Agnol, Alexandre Candido Paulo, Pablo Jenner Paredez Angeles and Victor Pellegrini Mammana
CenPRA, Brazil
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14:40 - 15:00 |
A Possible Optodevice using a Single Molecule of Dithiothreitol
Daniel Lohmann and Carlo Requi�o da Cunha
UFSC, Brazil
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15:00 - 15:20 |
The device-technological simulation of the field emission micro-cathodes with three-dimensional SOI-structures
Druzhynin Anatolij, Holota Viktor, Kogut Igor, Sapon Sergij and Khoverko Yurij
Lviv Polytechnic National University, Precarpathian National University, Thian National University, Kvazar-Micro, Ukraine
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15:20 - 15:40 |
Design of Disc-Shaped Tool in Electrochemical Removal of Displays' Color Filter Reclaim Processs
P.S. Pa
National Taipei University of Education, Taiwan
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15:40 - 16:00 |
Asymmetry and Rectification in Tunnel Current of All Polymer Diode
Bruno Sousa, Jo�o Paulo Santos, Helder Guimaraes, Janaina Guimaraes and Artemis Ceschin
UnB, Brazil
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16:00 - 16:30 |
Coffee-break (Room: Safira)
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16:30 - 18:30 |
Technical Panel (Room: Rubi)
Challenges of the Nanoscale Era
Organizer: Ricardo Jacobi (UnB, Brazil)
Moderator: Sergio Bampi (UFRGS, Brazil)
Panelists:
Rajesh Gupta (UCSD, USA)
Siegfried Selberherr (TU-Wien, Austria)
Andreas Kuehlmann (Cadence Berkeley Labs, USA)
Michel Renovell (LIRMM, France)
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18:30 - 20:30 |
Fringe Meeting (Room: Esmeralda, in Portuguese)
Assembl�ia Geral da Sociedade Brasileira de Microeletr�nica
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Thursday, September 4th
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Session 8 - Process Integration and Devices (Room: Esmeralda)
Chair: Jo�o Antonio Martino (USP)
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8:30 - 9:10 |
Overview on Gate Dielectrics (Invited)
José Alexandre Diniz (UNICAMP, Brazil) |
9:10 - 9:30 |
Halo Optimization for 0.13um SOI CMOS Technology
Paula Agopian, Julia Arraba�a and Jo�o Martino
USP, Centro Universit�rio da FEI, Brazil
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9:30 - 9:50 |
Behaviour Study of Low-Loss Slow-Wave Coplanar Transmission Lines for RFIC Applications
Darine Kaddour, Hamza Issa, Marwa Abdelaziz, Florence Podevin, Emmanuel Pistono, Jean-Marc Duchamp and Philippe Ferrari
IMEP-LAHC, France
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9:50 - 10:10 |
Adjustment of Microwave Integrated Circuit (MIC) with Focused Ion Beam (FIB)
Leonardo B. Zoccal, Alfredo R. Vaz, Silas D. Yamamoto, Stanislav Moschkalev, Jos� A. Diniz and Jacobus W. Swart
Unicamp, Brazil
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10:00 - 10:30 |
Coffee-Break (Room: Safira)
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Session 9 - MEMS: Devices, Structures and Processing I (Room: Esmeralda)
Chair: Renato Ribas (UFRGS)
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10:30 - 10:50 |
Direct Electrical Detection of Biological Species
Olivier De Sagazan, Maxime Harnois, Aurelie Girard, France Le Bihan, Anne-Claire Salaun, Samuel Crand and Tayeb Mohammed-Brahim
IETR, France
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10:50 - 11:10 |
Multi-scale Modeling and Simulation of Field-Effect Biosensors
Christian Ringhofer and Clemens Heitzinger
Arizona State University, USA
University of Vienna, Austria
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11:10 - 11:30 |
Electrical and optical response of a conducting polymer gas sensor
John Paul Hempel Lima and Adnei Melges de Andrade
USP, Brazil
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11:30 - 11:50 |
Time-of-Flight Flow Sensor Microstructure Using Free-Standing Polysilicon Filaments
Roberto Rodrigues and Rogerio Furlan
Federal University of ABC, Brazil
University of Puerto Rico at Humacao, Puerto Rico
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11:50 - 12:10 |
Simulation of Anisotropic Etching of Silicon Using a Cellular Automata Model
Jos� Pinto de Oliveira J�nior and Marcelo Nelson Pa�z Carre�o
USP, Brazil
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12:10 -14:00 |
Break for Lunch
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Session 10 - MEMS: Devices, Structures and Processing II (Room: Esmeralda)
Chair: Davies William Monteiro (UFMG)
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14:00 - 14:20 |
Complete Microfluidic System Fabricated in Glass Substrates
Juliana Novais Schianti, Murilo Zubioli Mielli, Alexandre Tavares Lopes and Marcelo Nelson Paez Carre�o
EPUSP, Brazil
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14:20 - 14:40 |
Nanocomposite of Porous Silicon and Methylene Blue Molecules for Optical Gas Sensor Application
Aldo Acosta, Daniel Raimundo, Danilo Huanca and Walter Salcedo
USP, Brazil
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14:40 -15:00 |
Piezoelectric Stimulation of Microcantilever Beams for Young's Modulus Determination of Amorphous hydrogenated Silicon Carbide
Gustavo Rehder and Marcelo Carre�o
EPUSP, Brazil
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15:00 -15:20 |
Secondary AgCl/Ag Pseudo-Reference Electrode in Silicon Substrate
Fernando Luis de Almeida, Marcelo Bariatto Andrade Fontes, Cecilia Jimenez and Isabel Burdallo
USP, FATECSP, Brazil
CNM-IMB, Spain
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15:20 - 15:40 |
ARX Model of Elastic Nuclei for Rotors MEMS
Manuel Reimbold, Wang Chong, Gideon Leandro and Renato Ribas
UNIJUI, UFRGS, Brazil
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15:40 - 16:00 |
Simulation and Fabrication of Suspended-Membrane Resistive Microbolometers Using Gold-Black as Absorber
Felipe Lorenzo Della Lucia, Jacobus Willibrordus Swart, Leonardo B. Zoccal, Jos� Alexandre Diniz, Ioshiaki Doi and Newton Cesario Frateschi
Unicamp, Brazil
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Session 11 - Nano-structures and Devices (Room: Top�zio)
Chair: Siegfied Selberherr (TU Vienna)
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14:00 - 14:20 |
Electrical Characterization of Multi-Walled Carbon Nanotubes in 2 and 4 Terminals Configurations
Jorge Leon, Stanislav A. Moshkalev, Alexander Flacker, Alfredo R. Vaz, Carla Verissimo and Mario A. Bica de Moraes
Unicamp, Brazil
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14:20 - 14:40 |
Local Anodic Oxidation Induced by Electric Fields of MV/cm at AFM Silicon Nitride Tips on Silicon Surfaces
Diego Kops Pinto and Sebasti�o Gomes dos Santos Filho
EPUSP, Brazil
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14:40 -15:00 |
Computational Intelligence Applied to the Growth of Quantum Dots
Anderson Singulani, Omar Vilela Neto, Marco Aur�lio Pacheco, Mauricio P. Pires and Patricia L. Souza
PUC-Rio, UFRJ, Brazil
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15:00 -15:20 |
Considerations about Interconnection Effects in Basic Single-Electron Circuits
Vitor Andrezo, Thacio Scandaroli, Janaina Guimaraes and Jose Camargo da Costa
UnB, Brazil
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15:20 - 15:40 |
Fabrication and Physical Characterization of Nickel Nanowires Formed by a Template-Based Electrodeposition Method
Juliana Lopes Cardoso, Giuliano Gozzi and Sebasti�o Gomes dos Santos Filho
UFMG, Brazil
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15:40 - 16:00 |
Evidence for an intraband Auger effect in InAs/InGaAlAs/InP quantum dot structures
Thomas Gebhard, Deborah Alvarenga, Patricia L. Souza, Paulo S�rgio Soares Guimar�es, Karl Unterrainer, Mauricio P. Pires, Gustavo S. Vieira and Jos� M. Villas-Boas
Photonics Institute - TU-Wien, Austria
UFMG, PUC-RIO, UFRJ, IEA, Brazil
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16:00 - 16:30 |
Coffee-break (Room: Safira) |
16:30-18:35 |
Session 12 - Poster session (Room: Esmeralda)
Chair: Nilton Morimoto (USP)
Optoelectronics
TiO2 Anti-Resonant Layer Arrow Waveguides
Daniel Orquiza Carvalho and Marco Isa�as Alayo
EPUSP, Brazil
Diffractive Optical Elements Based in Brand Glass
Marina Sparvoli, Ronaldo Mansano and Jos� Chubaci
EPUSP, Brazil
Analytical Model for a Mixed Association of Photovoltaic Cells
Tulio Barcelos, Moises Lessa and Davies de Lima Monteiro
UFMG, Brazil
Thermal Oxide Passivation by Corona Charges
Carlos Alberto Santos Ramos, Manuel Cid S�nchez, Nair Stem and Roberto Koji Onmori
EPUSP, Brazil
MOS Gate Dielectrics
Characteristics of Titanium Oxide Gate NMOSFET Formed by E-BEAM Evaporation With Additional Rapid Thermal Oxidation and Annealing
Ang�lica Denardi de Barros, Juliana Miyoshi, Ricardo Wada, Fabio A. Cavarsan, Ioshiaki Doi and Jos� Alexandre Diniz
UNICAMP, Brazil
Device Characterization
LIinearity Analisys in Double Gate Graded-Channel SOI Devices Applied to 2-MOS MOSFET-C Balanced Structures
Rodrigo Trevisoli Doria, Antonio Cerdeira, Jean-Pierre Raskin, Denis Flandre and Marcelo Pavanello
USP, FEI, Brazil
CINVESTAV, Mexico and UCL, Belgium
Carriers Mobility Extraction Methods for Triple-gate FinFET
Carolina Davanzzo Gomes dos Santos and Jo�o Antonio Martino
EPUSP, Brazil
Thin Films and Plasma Etching
Post-Silicidation Annealing Effects on Electrical and Structural Properties of NiPt Germanosilicide
Marcos Eleot�rio, Ioshiaki Doi, Robinson Figueroa, Jos� Alexandre Diniz and Sebasti�o G. dos Santos Filho USP, Brazil
Bird's Beak and Thermally Induced Stress Defects Evaluations of LOCOS Structures Fabricated Using ECR-CVD SiNx Without Pad Oxide
Heraldo Scalise UNICAMP, Brazil
Electroless Deposited Nickel Hard Mask for High Density Plasma Etching Applications
Alcinei Nunes, Stanislav Moshkalev, Alexander Flacker, Peter Tatsch and Edmilson Besseler UNICAMP, Brazil
Electrical characterization of Cu/Cu2O electrodeposited contacts
Iuri Stefani Brandt, Clodoaldo Irineu Levartoski de Araujo, Vagner Stenger, Rafael Gallina Delatorre, and Andr� Avelino Pasa UFSC, Brazil
Device Modeling
An Improved Current Model for Trapezoidal FINFETS
Gustavo Martins, Renato Giacomini and Jo�o Martino FEI, USP, Brazil
Corner Effect on Capacitance-Voltage curves in Triple Gate FinFET
Michele Rodrigues, Victor Sonnenberg and Jo�o Antonio Martino USP, FATEC/SP/CEETEPS, Brazil
Flexible Power Amplifiers Designing from Device to Circuit level by Computational Load-Pull Simulation Technique in TCAD
Ahsan Kashif, Sher Azam, Christer Sevensson and Qamar Wahab IFM-Link�ping University, Sweden
Organic Devices and Displays
Electrical Transport Mechanisms in Mono-Layer Phthalocyanine Device
Daniel Raimundo, Adriana Stelet, Danilo Huanca and Walter Salcedo USP, Brazil
A contribution to the development of organic semiconductor displays by the inkjet technique
Alex Frazatti and Adnei Andrade USP-POLI, USP-IEE, Brazil
Process Integration and Devices
DC performance and Low Frequency Noise in n-MOSFETs using Self-Aligned Poly-Si / SiGe Gate
Hugo Ricardo Jimenez, Leandro T. Manera, Ricardo Cotrin Teixeira, Marcia F. Rautemberg, Jos� Alexandre Diniz, Ioshiaki Doi, Peter J�rgen Tatsch, Hugo Enrique Hernandes Figueroa and Jacobus W. Swart UNICAMP, Brazil
Antennas miniaturization analysis for applications in sensors networks
Crezo M. Costa Jr, Glauco Fontgalland, M. A. B. Melo, Raimundo C.S. Freire, T.P. Vuong and Nilton Morimoto UFCG, USP, Brazil
INPG, France
MEMS: Devices, Structures and Processing
3D Simulation Software for Visualization of MEMS Microfabrication Processes
F�bio Belotti Colombo, Paula Morita Okama, Fernando Tsuda, Rafael Garib Jankauskas, Pedro Kayatt, Douglas F. de Souza and Marcelo N.P. Carre�o EPUSP, Brazil
Nano-structures and Devices
Fabrication of Multi-point Test Structures Using Focused Ion Beam and Selective Carbon Nanotubes Deposition by Dielectrophoresis
Marcelo Macchi da Silva, Alfredo Vaz, Carla Ver�ssimo, Stanislav Moshkalev and Jacobus Swart UNICAMP, Brazil
Digital Image Analysis to Determine Diameters Distribution of Nanofibers
Priscila Cal�ope, Emilio Hernandez and Ana Silva EPUSP, Brazil
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18:35 - 20:30 |
Fringe Meeting (Room: Rubi, in Portuguese)
Encontro com o Comit� Assessor de Microeletr�nica do CNPq
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20:30 - 23:00 |
Banquet Dinner:
Churrascaria Garfo & Bombacha
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