High Power, High Frequency, and New devices electronics
September 1st – 10:40am – 12:40pm
Room: Wafer
Chair: Roberto Panepucci
- 10:40h: Beyond Power: III-N Devices for Low-Power Systems, Millimeter-Wave Applications, and More – Invited
- 11:20h: Small break
- 11:40h: A 40 GHz-Platform using Soft Substrates
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Celio Finardi, Andre Ponchet, Cristina Adamo, Ricardo Teixeira, Alex Flacker and Roberto Panepucci
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- 12:00h: n-Channel Bulk and DTMOS FinFETs: Investigation of GIDL and Gate Leakage Currents
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Caio Malingre Magan, João Antonio Martino, Eddy Simoen, Cor Claeys and Maria Gloria Cano de Andrade
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- 12:20h: Influence of Substrate Bias in Electric Parameters of Multiple Gate SOI Transistors with Thin Buried Oxide Layer – (SFORUM)
- Érika Yamanaka and Rodrigo Doria