SOI Devices

September 1st – 16:40pm – 19:00pm

Room: Wafer

Chair: Paula Agopian

• 16:40h: Random Telegraph Signal Noise in Advanced High Performance and Memory Devices – Invited

  • Cor Clayes

• 17:20h: Low-Frequency Noise in Asymmetric Self-Cascode FD SOI nMOSFETs

  • Rafael Assalti, Denis Flandre, Rodrigo Trevisoli Doria, Marcelo Antonio Pavanello and Michelly de Souza

• 17:40h: Non-linearity Analysis of Triple Gate SOI Nanowires MOSFETS

  • Bruna Cardoso Paz, Rodrigo Trevisoli Doria, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot and Marcelo Antonio Pavanello

• 18:00h: Influence of different UTBB SOI Technologies on Analog Parameters

  • Vitor Itocazu, Victor Sonnenberg, Eddy Simoen, Cor Claeys and João Antonio Martino

• 18:20h: Proton Radiation Influence on SOI FinFET Trade-Off Between Transistor Efficiency and Unit Gain Frequency

  • Luis Felipe Vicentis Caparroz, Joao Antonio Martino, Eddy Simoen, Cor Claeys and Paula Ghedini Der Agopian

• 18:40h: Back Enhanced (BE) SOI pMOSFET Beahavior at High Temperatures

  • Leonardo Yojo, José A. Padovese, Ricardo C. Rangel and Joao A. Martino