SBMICRO 2002
17th SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES
CHIP IN THE PAMPA

Porto Alegre, RS, BRAZIL, September 9-12, 2002
Canela, RS, BRAZIL, September 12-14,2002

 

PROGRAM

Session T1 - Simulaion
Session Chair: Renato Perez Ribas
Monday, 8:30 - 10:10

1. SIMULATION OF THE DC CONDUCTANCE OF BALLISTIC QUANTUM DEVICES
Edval J. P. Santos

2. TWO-DIMENSIONAL SIMULATION OF ALGAAS/INGAAS/GAAS PHEMTS
Paulo César Miranda Machado

3. ETCHING SIMULATOR FOR BULK MICROMACHINING IN JAVA PLATFORM
F. Martinazzo, A. Konzen, J. D. Togni, A. I. Reis and R. P. Ribas

4. SIMULATION OF THE MECHANICAL-STRESS EFFECT IN BIPOLAR JUNCTION TRANSISTORS
Fabiano Fruett

Session T2 - Device Technology I
Session Chair: Joan Morante
Monday, 10:30 - 11:20

5. DEVELOPMENT OF CMOS-APS TECHNOLOGY
H. G. Jimenez, S. N. M.Muñoz, M. A. Pavanello, I.F.Silva, J. A. Diniz, M. B.Zakia, I. Doi, J. W. Swart*

6. POLYCRYSTALLINE THIN FILM TRANSISTORS AS MULTIPURPOSE AMBIENCE SENSORS
H. Mahfoz - Kotb, A.C.Salaün, T.Mohammed-Brahim, F. Le Bihan, O. Bonnaud

Session T3 - Device Technology II
Session Chair: Olivier Bonnaud
Monday, 14:00 - 14:50

7. IMPACT OF THERMAL BUDGET ON JUNCTION LEAKAGE IN A 0.18and 0.13 um CMOS TECHNOLOGY
A. Poyai, E. Simoen, C.Claeys, R. Rooyackers andA. Redolfi

8. COMPARISON BETWEEN 0.13 mm PARTIALLY-DEPLETED SILICON-ON-INSULATOR TECHNOLOGY WITH FLOATING BODY OPERATION AT 300 K AND 90 K
M. A. Pavanello, J. A.Martino, A. Mercha, J.M. Rafi, E. Simoen,C.Claeys,H. van Meer and K.De Meyer

INVITED PAPER
Technology Challenges Related to Ultimate CMOS and the End-of-Roadmap Microelectronics - C.L. Claeys, H.E. Maes

Session T4 - SOI I
Session Chair: Cor Claeys
Tuesday, 8:30 - 10:10

9. DETERMINATION OF THE SILICON FILM DOPING CONCENTRATION AND THE BACK INTERFACE OXIDE CHARGE DENSITY USING SOI-NMOS GATE CAPACITOR
Victor Sonnenberg and João Antonio Martino

10. THE LEAKAGE CURRENT COMPOSITION IN THIN FILM SOI nMOSFETs AT HIGH TEMPERATURES
Marcello Bellodi and João Antonio Martino

11. ANALOG PERFORMANCE OF GRADED-CHANNEL SOI NMOSFETS AT LOW TEMPERATURES
M. A. Pavanello, J. A. Martino and D. Flandre

12. THE INFLUENCE OF THE INTERFACE TRAP DENSITIES ON THE EXTRACTION OF THE SILICON FILM AND FRONT OXIDE THICKNESS OF SOI NMOS DEVICES AT LOW TEMPERATURES
Aparecido S. Nicolett, JoãoA. Martino, Eddy Simoen,Cor Claeys

Session T5 - SOI II
Session Chair: Nilton Morimoto
Tuesday, 10:30 - 11:20

13. A PHYSICALLY-BASED CONTINUOUS MODEL FOR GRADED-CHANNEL SOI MOSFET
Marcelo Antonio Pavanello, Benjamín Iñíguez, João Antonio Martino and Denis Flandre

14. A SIMPLE ANALYTICAL MODELOF GRADED-CHANNEL SOInMOSFET TRANSCONDUCTANCE
S. P. Gimenez, M. A.Pavanello, J. A. Martino

Session T6 - Plasma Etching
Session Chair: Jacobus Swart
Tuesday, 14:00 - 14:50

15. CHARACTERIZATION OF SF6 PLASMAS BY RF ELECTRICAL MEASUREMENTS
Marcelo Bento Pisani Patrick Verdonck

16. STUDY OF POWER BALANCE IN ASYMMETRIC CAPACITIVELY COUPLED DISCHARGE PLASMAS USED FOR MATERIAL PROCESSING
S. A. Moshkalyov, C.Reyes-Betanzo and J. W. Swart

INVITED PAPER
Making High Performance Silicon Devices on Low Temperature Substrates - T. Mohammed-Brahim, O. Bonnaud

Session T7 - Thin Films I
Wednesday, 08:30 - 10:10

17. HIGH DENSITY-PECVD SILICON OXIDE DEPOSITION BY TEOS AND OXYGEN AT LOW TEMPERATURE (375C).
Carlos Eduardo Viana, João Luiz dos Reis Santos and Nilton Itiro Morimoto

18. FORMATION OF NICKEL MONOSILICIDE ONTO (100) SILICON WAFER SURFACES
Ronaldo Willian Reis and Sebastião Gomes dos Santos Filho

INVITED PAPER
From Micro to Nano technologies: Where Micro Meets and Needs Nano? –
J. Morante

Session T8 - Thin Films II
Session Chair: Patrick Verdonck
Wednesday, 10:30 - 11:20

19. FORMATION AND CHARACTERIZATION OF THE Ni(Pt)Si AND NiSi FOR MOS DEVICES APPLICATIONS
Regis E. Santos, IoshiakiDoi, José A. Diniz, Jacobus W. Swart, and Sebastião G. dos Santos

20. Mechanical Properties of Silicon Oxide Films Deposited by PECVD-TEOS for Application in MEMS Structure and Sensors
Luiz C. D. Gonçalves, Ana N.R.da Silva, Celso F.Alfano, Nilton I. Morimoto, Josemir C. Santos

Session T9 - Microoptics and Microfluidics
Session Chair: Tayeb Mohammed-Brahim
Wednesday, 14:00 - 14:50

21. FABRICATION OF PMMA MICROLENSES USING A MICROMACHINED SILICON MOULD
Giuseppe A. Cirinoa Antonio C. Arruda Ronaldo D. Mansano Patrick Verdonck Luiz G. Neto

22. IMPLEMENTATION OF AN OPTICAL INTEGRATED PRESSURE SENSOR AND EXPERIMENTAL RESULTS
Acácio L. Siarkowski Douglas A. P. Bulla Nilton I. Morimoto

TUTORIAL
Microfluidics Devices and Microsystems–. Eliphas W. Simões

Session T10 - Microtechnology I
Session Chair: Edval J.P. Santos
Thursday, 08:30 - 10:10

23. Wet Anisotropic Etching Characterization of Crystalline Silicon for Suspended Micro-Mechanical Structure Manufacture
Roberto R. Neli , Ioshiaki Doi, José A. Diniz, and Jacobus W. Swart
24. POROUS SILICON SACRIFICIAL LAYERS APPLIED ON MICROMECHANICAL STRUCTURES FABRICATION
Michel O.S. Dantas; Elisabete Galeazzo;Henrique E. M. Peres; Francisco Javier R. Fernandez

25. MICRO-BELT CONVEYOR OFLATEX MICROSPHERES
JFernández Morales F.*,Duarte J. E.* and Samitier J.

26. LTCC HYBRID TECHNOLOGY APPLIED TO WATER QUALITY MESO ANALYTICAL SYSTEM
Mario Gongora RubioMarcelo Bariatto A. Fontes Eliphas Wagner SimõesJorge Santiago-AvilésK)

Session T11 - Microtechnology II
Session Chair: Jose Camargo da Costa
Thursday, 10:30 - 10:20

INVITED PAPER
CATHETER FOR INTRACAVITARY CARDIAC POTENTIAL DETECTION
Marcelo Bariatto A. Fontes and Idagene A. Cestari

Session T12 - Posters Presentation
Session Chair: Renato Ribas
Thursday, 14:00 - 15:40

Information for authors: poster size = 0.9m x 0.9m

LARGE SIGNAL DYNAMIC ADMITTANCE OF PN-JUNCTIONS
E.J.P. Santos and A.A. Barybin

NUMERICAL MODELING OF A PROCESS FOR DEFINITON OF FEATURES IN LOW TEMPERATURE CO-FIRED CERAMICS
E.W. Simões, I.R.L. García, R. Furlan, J.J. Santiago-Avilés and M.T. Pereira

HIGH-EFFICIENCY EMITTER SOLAR CELLS AND THEIR APPLICABILITY IN INDUSTRIAL PROCESS
M. Cid and N. Stem

A SAMPLE-AND-HOLD CIRCUIT TOPOLOGY WITH OFFSET VOLTAGE AND SELF CORRECTION FOR PRECISE APPLICATIONS IN CMOS
L.H.C Ferreira, R.L. Moreno, T.C. Pimenta and C.A. Reis Filho

CHARACTERIZATION OF MICROACTUATORS BY LASER
J.E. Duarte, F.H. Fernández and M. Moreno

COMPACT SPICE MACROMODEL FOR SAW BASED SMART SENSOR DESIGN
A.M. Barbosa and E.J.P. Santos

POLARIZATION-DIFFERENCE IMAGING TECHNIQUE FOR MATERIAL CHARACTERIZATION: ALGORITHM AND SOME APPLICATIONS
H.P. Araújo and S.G. Santos Filho

DEEP ANISOTROPIC ETCHING OF SILICON WITH SMOOTH SURFACE FOR MICROMACHINING APPLICATIONS
S.A. Moshkalyov, C. Reyes-Betanzo and J.W. Swart

VERY LOW PLASMA OXIDATION RATE FOR HIGH QUALITY ULTRATHIN SIO2 LAYERS
J.C. Tinoco and M. Estrada

NEW PROCEDURE FOR THE EXTRACTION A-SI:H MODEL SUB-THRESHOLD PARAMETERS
L. Reséndiz, M. Estrada, A. Cerdeira, A. Ortiz-Conde and F.J. García Sánchez

ELECTRICAL AND PHYSICAL CHARACTERIZATION OF ELECTROLESS NICKEL FILMS ON POLYSILICON GATE ELECTRODES
A.R. Navia and S.G. Santos Filho

DEVELOPMENT OF A TIME-OF-FLIGHT FLOW MICROSENSOR
R.J. Rodrigues and R. Furlan

DILUTED HNO3/HF AS A FINAL PRE-OXIDATION CLEANING STEP FOR MOS DEVICES
W.A. Nogueira, L.Z. Toquetti, S.G. Santos Filho

BEHAVIOR OF GRADED-CHANNEL FULLY DEPLETED SOI NMOSFET AT HIGH TEMPERATURES
M. Galeti, M.A. Pavanello, J.A. Martino

NANO-MECHANICAL PROPERTIES OF SILK LOW-K DIELECTRIC MATERIAL
J.C. González, M.I.N. Silva, L. Kuhn, D. Griffis and P.E. Russell

EFFECT OF STENCIL ALIGNMENT ON THE SOLDER BEADING IN SMT PROCESS
F.S. Silva and M.M. Oka

A NOVEL SILICON-METAL PROCESS FOR MEMS
P.R. Barbaroto, I. Doi, L.O.S. Ferreira

LOCOS ISOLATION MADE BY SILICON NITRIDE ECR PLASMA DEPOSITION AT ROOM TEMPERATURE
M.A. Pereira, J.A. Diniz, I. Doi, J.W. Swart

PHOSPHORUS IMPLANTATION ON NEAR STOICHIOMETRIC A-SIC:H FILMS
A.R. Oliveira and M.N.P. Carreño

SEMICONDUCTOR LIGHT EMITTING DIODES: AN EMPIRICAL STUDY FOR USES IN FIBER OPTIC GYROSCOPES
E.S. Ferreira, N.I. Morimoto and R.T. Carvalho

3D TOPOGRAPHY IN SELF-SUSTAINED MEMBRANES OF SIOXNY OBTAINED BY PECVD TECHNIQUE AT LOW TEMPERATURES
M.N.P. Carreño, A.T. Lopes, M.I. Alayo and I. Pereyra

IMPROVEMENTS IN FOCUSED ION BEAM MICRO-MACHINING OF INTERCONNECT MATERIALS
J.C. Gonzalez, M.I.N. Silva, D.P. Griffis, T.T. Miau, and P.E. Russell

HIGHLY CONDUCTIVE N-TYPE _C-SI:H FILMS DEPOSITED AT VERY LOW TEMPERATURE
A.M. Nardes, E.A.T. Dirani, A.M. Andrade and F.J. Fonseca

DIFFERENCE BETWEEN KINK AND BIPOLAR PARASITIC EFFECTS IN THIN FILM SOI MOSFET
P.T. Hoashi and J.A. Martino

INFLUENCE OF THE BACK GATE VOLTAGE ON THE TOTAL SERIES RESISTANCE OF FULLY DEPLETED SOI MOSFETS AT 300 K AND 77 K
A.S. Nicolett, J.A. Martino, E. Simoen and C. Claeys

A PROGRAMMABLE ANALOG GAUSSIAN FUNCTION SYNTHESIZER
J.P. Oliveira and N. Oki

BASIC SUBCIRCUITS WITH SINGLE-ELECTRON TUNNELING DEVICES
J. Guimarães, H.C. Carmo and J.C. Costa

 

 

 

 

 

 

 

 

 

 

 


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