 |
Impact
of the Nitrogen Concentration of Sub-1.3 nm Gate Oxides on
65 nm Technology Transistor Parameters
A. L. P. Rotondaro; R. T. Laaksonen; S. P. Singh
Plasma
Parameters Obtained with Planar Probe and Optical Emission
Spectroscopy
A. M. Daltrini; S. A. Moshkalev; L. Swart; P. B. Verdonck
Plasma
Etching of Polycrystalline Silicon using Thinning Technology
for Application in CMOS and MEMS Technologies
A. M. Nunes; S. A. Moshkalev; P. J. Tatsch; A. M. Daltrini
Effect
of Nucleation Parameters of Ge Quantum Dots Grown over Silicon
Oxide by LPCVD
S. N. M. Mestanza; I. Doi; N. C. Frateschi
Fabrication
of Ti-Si-Ti Metal-Semiconductor-Metal Photodetectors Using
Low Temperature Rapid Thermal Annealing
R. L. Ohta; C. E. Viana; N. I. Morimoto; B. H. V. Borges
Study
of MOS Capacitors With TiO2 and SiO2/TiO2 Gate Dieletric
K. F. Albertin; M. A. Valle; I. Pereira
Bridging
Electrical and Structural Interface Properties: a Combined
DFT-GW Approach
L. R. C. Fonseca; PY. Prodhomme; P. Blaise
Charge-Based
Continuous Equations for the Transconductance and Output Conductance
of Graded-Channel SOI MOSFET's
M. de Souza; M. A. Pavanello
Cover, back-cover,
foreword and sumario |
